High-power diffraction-limited phase-locked GaAs/GaAlAs semiconductor laser array

High-power diffraction-limited phase-locked gallium-arsenide (GaAs)/ gallium-aluminum-arsenide (GaAlAs) semiconductor laser arrays have been fabricated using the LPE technique, the standard photolithographic technique, wet etching, and proton bombardment. The tailored gain-guided arrays are made by...

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Veröffentlicht in:Fiber and integrated optics 1990-07, Vol.9 (3), p.219-223
Hauptverfasser: Xi-Tian, Zhang, We-Ching, Zhang, We-Zhi, Piao, Dian-En, Li, Sheng-Li, Wu, Shu-Qin, Du
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Sprache:eng
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Zusammenfassung:High-power diffraction-limited phase-locked gallium-arsenide (GaAs)/ gallium-aluminum-arsenide (GaAlAs) semiconductor laser arrays have been fabricated using the LPE technique, the standard photolithographic technique, wet etching, and proton bombardment. The tailored gain-guided arrays are made by varying the width of the channels of the lasers while keeping the spacing between them constant. The array consists of six lasers. Its optical output power per facet is 300 mW at 2.71 th with single-mode continuous wave (CW) operation and single lobe far-field pattern with full width at half maximum (FWHM) of 1.90°.
ISSN:0146-8030
1096-4681
DOI:10.1080/01468039008202909