Some studies of BF2 and B+F implanted Silicon

Ion-implanted shallow junctions have been investigated using BE 2 (molecular ions) by the anodic oxidation method coupled with a four-point probe technique. BF 2 ions were implanted through screen oxide at doses of 3-5 × 10 15 ions/cm 2 and energies of 25 and 45 keV which is equivalent to 5.6 keV and 10 keV of boron ions. The effect of energy, dose and annealing temperature on shallow junctions is presented in this paper. The shallow junctions in the range of 0.19 μm to 0.47 μm were fabricated. The effect of fluorine on sheet resistivity of boron implanted silicon at various doses, treated with two-step and three-step annealing, is also presented for comparison in the paper.