Radiative recombination of Al+-implanted alpha-sic p-n structures

It has been shown that the radiation spectrum of implanted α-SiC p-n structures depends on the heat treatment temperature. The radiative intensity of green and IR peaks varies with the increase of the heat treatment temperature: at the minimum temperature the IR peak is dominating, while at the maximum temperature the green line is dominant. In this case the IR line disappears practically completely. The presence of green luminescence seems to be attributed to radiative recombination at donor-acceptor pairs. The IR luminescence line should be ascribed to the radiative recombination at deep (∼1.5 eV) levels produced during ion implantation.