Quantization effects in metal/a-Si:H/metal devices

Quantization effects in metal/a-Si:H/metal devices

We present experimental results showing that metal/p + /metal amorphous silicon (a-Si: H) memory structures exhibit room temperature quantized electron transport associated with quantized resistance. The quantization of resistance is observed at values of R = h/2ie 2 , where i is an integer or a hal...

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Veröffentlicht in:International journal of electronics 1992-11, Vol.73 (5), p.911-913
Hauptverfasser: HAJTO, J., ROSE, M. J., OSBORNE, I. S., SNELL, A. J., COMBER, P. G. LE, OWEN, A. E.
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Sprache:eng
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Zusammenfassung:We present experimental results showing that metal/p + /metal amorphous silicon (a-Si: H) memory structures exhibit room temperature quantized electron transport associated with quantized resistance. The quantization of resistance is observed at values of R = h/2ie 2 , where i is an integer or a half integer.
ISSN:0020-7217
1362-3060
DOI:10.1080/00207219208925735