Integrated power MOSFET driver for switched mode power supplies

This power MOSFET driver can drive a 2500 pF capacitive load with less than 35 ns delay and only 300 µA standby current. It is TTL compatible with 400 m V of hysteresis, and can operate with power supply voltages between 4.5 V and 18 V.

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Bibliographische Detailangaben
Veröffentlicht in:	International journal of electronics 1990-02, Vol.68 (2), p.323-327
Hauptverfasser:	YAN, RAYMOND C., LEACH, DONALD P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Other multijunction devices. Power transistors. Thyristors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	This power MOSFET driver can drive a 2500 pF capacitive load with less than 35 ns delay and only 300 µA standby current. It is TTL compatible with 400 m V of hysteresis, and can operate with power supply voltages between 4.5 V and 18 V.
ISSN:	0020-7217 1362-3060
DOI:	10.1080/00207219008921174