Direct Integration of Pt/RuO2/Ru electrode structures on poly-Si for high dielectric thin films

The barrier layers, RuO 2 /Ru, in electrode structures of Pt/RuO 2 /Ru/poly-Si were prepared by metalorganic chemical vapor deposition (MOCVD) and dc sputtering. The electrode structures formed by dc sputtering showed completely intermixing morphologies with increasing annealing temperature. However, the barrier layers deposited by MOCVD showed a stable interface and did not affect the surface morphology of the platinum bottom electrode at the high annealing temperature of 800[ddot]C. The resistivity of platinum deposited on the dc sputtered (RuO 2 /Ru) layer increased linearly with increasing annealing temperature. On the other hand, the resistivity of platinum on the MOCVD (RuO 2 /Ru) barrier layer did not vary with increasing annealing temperature. The barrier layers of RuO 2 /Ru formed by MOCVD effectively prevented the interdiffusion of Pt, O, and Si at high annealing temperature in oxygen ambient.