Some aspects of growth and characterisation of BSO and BGO crystals

Some aspects of growth and characterisation of BSO and BGO crystals

Bismuth silicon oxide (BSO) and bismuth germanium oxide (BGO) crystals were grown by the Czochralski technique and the various parameters such as crystal rotation rate, pulling rate and growth temperature have been optimised for bubble free growth.

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Bibliographische Detailangaben
Veröffentlicht in:Ferroelectrics 1993-01, Vol.142 (1), p.161-165
Hauptverfasser: Gopalakrishnan, R., Krishnamurthy, D., Arivuoli, D., Ramasamy, P.
Format: Artikel
Sprache:eng
Schlagworte:
BGO
BSO
Czochralski and characterisation
growth
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Beschreibung
Zusammenfassung:Bismuth silicon oxide (BSO) and bismuth germanium oxide (BGO) crystals were grown by the Czochralski technique and the various parameters such as crystal rotation rate, pulling rate and growth temperature have been optimised for bubble free growth.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150199308237895