TfI14: Ferroelectric thin films for memory applications: Sol-gel processing and decomposition of organo-metallic compounds
Pb(Zr x Ti 1-x )O 3 (PZT), Bi 4 Ti 3 O 12 and BaTiO 3 films as well as SrTiO 3 films are considered for nonvolatile memory applications and high density dynamic random access memories. These perovskite systems are frequently deposited by a sol-gel or MOD technique. Processing and the properties of t...
Gespeichert in:
| Veröffentlicht in: | Ferroelectrics 1992-08, Vol.133 (1), p.91-96 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | Pb(Zr
x
Ti
1-x
)O
3
(PZT), Bi
4
Ti
3
O
12
and BaTiO
3
films as well as SrTiO
3
films are considered for nonvolatile memory applications and high density dynamic random access memories. These perovskite systems are frequently deposited by a sol-gel or MOD technique. Processing and the properties of the thin films are summarized. |
|---|---|
| ISSN: | 0015-0193 1563-5112 |
| DOI: | 10.1080/00150199208217981 |