TdI10: Ferroelectric thin films in integrated microelectronic devices
We present results on four integrated ferroelectric projects: 1) An integrated barium strontium titanate thin-film on GaAs MMIC (monolithic microwave integrated circuit) with dielectric constant of 450 and loss tangent of 10 −3 at 2.2 GHz operation, done as a Symetrix/Matsushita Electronics Corp. jo...
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Veröffentlicht in: | Ferroelectrics 1992-08, Vol.133 (1), p.47-60 |
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Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We present results on four integrated ferroelectric projects: 1) An integrated barium strontium titanate thin-film on GaAs MMIC (monolithic microwave integrated circuit) with dielectric constant of 450 and loss tangent of 10
−3
at 2.2 GHz operation, done as a Symetrix/Matsushita Electronics Corp. joint development; 2) A low-density (1 Kb) ferroelectric RAM (random access memory) done with PZT (lead zirconate titanate) and other ferroelectrics on CMOS (complementary metal oxide semiconductor) Si, carried out as a joint development with Olympus Optical Co.; 3) A liquid-source CVD (chemical vapor deposition) machine and its deposition of strontium titanate and barium strontium titanate films of exceptionally low d.c. leakage current (1 nA/cm
2
at 120 nm thickness and 3V operation) for DRAM (dynamic RAM) applications; and 4) performance parameters of a properietary material for RAM application which is totally fatigue-free up to at least 5 × 10
11
cycles. |
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ISSN: | 0015-0193 1563-5112 |
DOI: | 10.1080/00150199208217976 |