DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm
We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wav...
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Veröffentlicht in: | Electronics letters 2017-11, Vol.53 (23), p.1537-1539 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader. |
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ISSN: | 0013-5194 1350-911X 1350-911X |
DOI: | 10.1049/el.2017.2689 |