GaSb-based 2.0 μm SDL with 17 W output power at 20°C

A gallium antimonide-based semiconductor disk laser (SDL) emitting 17 W of continuous wave output power at a heat sink temperature of 20°C and an emission wavelength of 2.02 μm are presented. This high-output power is achieved by optimising the thermal management and reducing the quantum deficit of...

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Veröffentlicht in:	Electronics letters 2016-10, Vol.52 (21), p.1794-1795
Hauptverfasser:	Holl, P, Rattunde, M, Adler, S, Bächle, A, Diwo-Emmer, E, Aidam, R, Wagner, J
Format:	Artikel
Sprache:	eng
Schlagworte:	continuous wave output power gallium compounds GaSb heat sink temperature III‐V semiconductors laser beams Photonics power 17 W quantum deficit SDL semiconductor disk laser semiconductor lasers temperature 20 degC thermal management wavelength 2.0 mum
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Beschreibung
Zusammenfassung:	A gallium antimonide-based semiconductor disk laser (SDL) emitting 17 W of continuous wave output power at a heat sink temperature of 20°C and an emission wavelength of 2.02 μm are presented. This high-output power is achieved by optimising the thermal management and reducing the quantum deficit of the SDL structure.
ISSN:	0013-5194 1350-911X 1350-911X
DOI:	10.1049/el.2016.2412