Memristive behaviour of high-impedance faults

In this reported work, the analogy between parallel electrical arcs and memristors is extended to high-impedance faults such as carbonised paths and circuit openings. First, it is demonstrated that the conductance from the high-impedance Mayr model behaves like a particular memductance sensitive to...

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Veröffentlicht in:Electronics letters 2016-02, Vol.52 (4), p.300-302
Hauptverfasser: Tisserand, E, Berviller, Y, Humbert, J.B
Format: Artikel
Sprache:eng
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Zusammenfassung:In this reported work, the analogy between parallel electrical arcs and memristors is extended to high-impedance faults such as carbonised paths and circuit openings. First, it is demonstrated that the conductance from the high-impedance Mayr model behaves like a particular memductance sensitive to the integral of the squared current. Then, the current–voltage plot confirms the memristive behaviour of high-impedance faults, both by simulation and with experimental results.
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2015.3738