Pulsed radio frequency characterisation on 28 nm complementary metal–oxide semiconductor technology

The influence of electrothermal behaviour on radio frequency (RF) performances of 28 nm bulk complementary metal–oxide semiconductor technology is examined. Biased continuous-wave RF and pulsed RF (applying different DC pulse and RF pulse width combinations) characterisations are performed within th...

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Veröffentlicht in:	Electronics letters 2015-01, Vol.51 (1), p.71-72
Hauptverfasser:	Sahoo, A.K, Fregonese, S, Scheer, P, Celi, D, Juge, A, Zimmer, T
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS integrated circuits complementary metal–oxide semiconductor Degradation Devices electrothermal behaviour Engineering Sciences frequency 1 GHz to 30 GHz Frequency domains Metal oxide semiconductors Metal oxides Micro and nanotechnologies Microelectronics microwave integrated circuits Microwave technology pulsed radio frequency characterisation Radio frequencies self‐heating effect Semiconductors size 28 nm temperature 293 K to 298 K Transit UHF integrated circuits
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Zusammenfassung:	The influence of electrothermal behaviour on radio frequency (RF) performances of 28 nm bulk complementary metal–oxide semiconductor technology is examined. Biased continuous-wave RF and pulsed RF (applying different DC pulse and RF pulse width combinations) characterisations are performed within the 1–30 GHz frequency domain at room temperature and the transit frequency (fT) is extracted at 15 GHz frequency. It has been found that the degradation in fT on I/O devices is about 3 GHz because of the self-heating effect.
ISSN:	0013-5194 1350-911X 1350-911X
DOI:	10.1049/el.2014.3634