InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment
This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a pea...
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| Veröffentlicht in: | Electronics letters 2013-03, Vol.49 (7), p.499-500 |
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| container_end_page | 500 |
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| container_issue | 7 |
| container_start_page | 499 |
| container_title | Electronics letters |
| container_volume | 49 |
| creator | Ho, Han-Chieh Gao, Zong-Yan Lin, Heng-Kuang Chiu, Pei-Chin Hsin, Yue-Ming Chyi, Jen-Inn |
| description | This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm. |
| doi_str_mv | 10.1049/el.2013.0430 |
| format | Article |
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The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm.</description><identifier>ISSN: 0013-5194</identifier><identifier>ISSN: 1350-911X</identifier><identifier>EISSN: 1350-911X</identifier><identifier>DOI: 10.1049/el.2013.0430</identifier><identifier>CODEN: ELLEAK</identifier><language>eng</language><publisher>Stevenage: The Institution of Engineering and Technology</publisher><subject>aluminium compounds ; Applied sciences ; Circuit properties ; DC performances ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; gallium compounds ; gate‐length device ; high electron mobility transistors ; hydrogen plasma treatment ; indium compounds ; InGaSb‐AlSb ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; plasma materials processing ; p‐channel HFET ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor technology ; size 0.2 mum ; Transistors ; voltage 0.47 V to 0 V</subject><ispartof>Electronics letters, 2013-03, Vol.49 (7), p.499-500</ispartof><rights>The Institution of Engineering and Technology</rights><rights>2020 The Institution of Engineering and Technology</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c3684-91f8e0c47e3393fb780cd70638939b52119c22dcc011da3f209f639f1322dd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1049%2Fel.2013.0430$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1049%2Fel.2013.0430$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1416,11560,27922,27923,45572,45573,46050,46474</link.rule.ids><linktorsrc>$$Uhttps://onlinelibrary.wiley.com/doi/abs/10.1049%2Fel.2013.0430$$EView_record_in_Wiley-Blackwell$$FView_record_in_$$GWiley-Blackwell</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27211401$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ho, Han-Chieh</creatorcontrib><creatorcontrib>Gao, Zong-Yan</creatorcontrib><creatorcontrib>Lin, Heng-Kuang</creatorcontrib><creatorcontrib>Chiu, Pei-Chin</creatorcontrib><creatorcontrib>Hsin, Yue-Ming</creatorcontrib><creatorcontrib>Chyi, Jen-Inn</creatorcontrib><title>InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment</title><title>Electronics letters</title><description>This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm.</description><subject>aluminium compounds</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>DC performances</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>gallium compounds</subject><subject>gate‐length device</subject><subject>high electron mobility transistors</subject><subject>hydrogen plasma treatment</subject><subject>indium compounds</subject><subject>InGaSb‐AlSb</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>plasma materials processing</subject><subject>p‐channel HFET</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor technology</subject><subject>size 0.2 mum</subject><subject>Transistors</subject><subject>voltage 0.47 V to 0 V</subject><issn>0013-5194</issn><issn>1350-911X</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9j09Lw0AUxBdRsNTe_AA5KHgw7XvZTdL1Vkv_CAEP9eBt2Wx2bWSbht1I6bd3S0Q8qKcHw2_mzRByjTBGYHyi7TgBpGNgFM7IAGkKMUd8PScDCHqcImeXZOR9XQIyZBkwHJCHp2YlN-VkZjdl1MZqK5tG22i9XLz46FB322h7rNz-TTdRa6XfyahzWnY73XRX5MJI6_Xo6w7JJrjm67h4Xj3NZ0WsaDZloYOZalAs15Ryasp8CqrKIaNTTnmZJohcJUmlFCBWkpoEuMkoN0iDWtEhue9Tldt777QRrat30h0FgjgNF9qK03BxGh7w2x5vpVfSGicbVftvT5KHfyzQQ5L23KG2-vhvplgURfK4BKDIgu-u99W6E-_7D9eE6X9VufkFXRQ_ktvK0E-yuH4y</recordid><startdate>20130328</startdate><enddate>20130328</enddate><creator>Ho, Han-Chieh</creator><creator>Gao, Zong-Yan</creator><creator>Lin, Heng-Kuang</creator><creator>Chiu, Pei-Chin</creator><creator>Hsin, Yue-Ming</creator><creator>Chyi, Jen-Inn</creator><general>The Institution of Engineering and Technology</general><general>Institution of Engineering and Technology</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130328</creationdate><title>InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment</title><author>Ho, Han-Chieh ; Gao, Zong-Yan ; Lin, Heng-Kuang ; Chiu, Pei-Chin ; Hsin, Yue-Ming ; Chyi, Jen-Inn</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3684-91f8e0c47e3393fb780cd70638939b52119c22dcc011da3f209f639f1322dd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>aluminium compounds</topic><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>DC performances</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>gallium compounds</topic><topic>gate‐length device</topic><topic>high electron mobility transistors</topic><topic>hydrogen plasma treatment</topic><topic>indium compounds</topic><topic>InGaSb‐AlSb</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>plasma materials processing</topic><topic>p‐channel HFET</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor technology</topic><topic>size 0.2 mum</topic><topic>Transistors</topic><topic>voltage 0.47 V to 0 V</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ho, Han-Chieh</creatorcontrib><creatorcontrib>Gao, Zong-Yan</creatorcontrib><creatorcontrib>Lin, Heng-Kuang</creatorcontrib><creatorcontrib>Chiu, Pei-Chin</creatorcontrib><creatorcontrib>Hsin, Yue-Ming</creatorcontrib><creatorcontrib>Chyi, Jen-Inn</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ho, Han-Chieh</au><au>Gao, Zong-Yan</au><au>Lin, Heng-Kuang</au><au>Chiu, Pei-Chin</au><au>Hsin, Yue-Ming</au><au>Chyi, Jen-Inn</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment</atitle><jtitle>Electronics letters</jtitle><date>2013-03-28</date><risdate>2013</risdate><volume>49</volume><issue>7</issue><spage>499</spage><epage>500</epage><pages>499-500</pages><issn>0013-5194</issn><issn>1350-911X</issn><eissn>1350-911X</eissn><coden>ELLEAK</coden><abstract>This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm.</abstract><cop>Stevenage</cop><pub>The Institution of Engineering and Technology</pub><doi>10.1049/el.2013.0430</doi><tpages>2</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2013-03, Vol.49 (7), p.499-500 |
| issn | 0013-5194 1350-911X 1350-911X |
| language | eng |
| recordid | cdi_iet_journals_10_1049_el_2013_0430 |
| source | Wiley Online Library Open Access |
| subjects | aluminium compounds Applied sciences Circuit properties DC performances Electric, optical and optoelectronic circuits Electronics Exact sciences and technology gallium compounds gate‐length device high electron mobility transistors hydrogen plasma treatment indium compounds InGaSb‐AlSb Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits plasma materials processing p‐channel HFET Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor technology size 0.2 mum Transistors voltage 0.47 V to 0 V |
| title | InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment |
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