InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment

This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a pea...

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Veröffentlicht in:	Electronics letters 2013-03, Vol.49 (7), p.499-500
Hauptverfasser:	Ho, Han-Chieh, Gao, Zong-Yan, Lin, Heng-Kuang, Chiu, Pei-Chin, Hsin, Yue-Ming, Chyi, Jen-Inn
Format:	Artikel
Sprache:	eng
Schlagworte:	aluminium compounds Applied sciences Circuit properties DC performances Electric, optical and optoelectronic circuits Electronics Exact sciences and technology gallium compounds gate‐length device high electron mobility transistors hydrogen plasma treatment indium compounds InGaSb‐AlSb Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits plasma materials processing p‐channel HFET Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor technology size 0.2 mum Transistors voltage 0.47 V to 0 V
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Beschreibung
Zusammenfassung:	This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm.
ISSN:	0013-5194 1350-911X 1350-911X
DOI:	10.1049/el.2013.0430