High-efficiency CMOS stacked-FET power amplifier for W-CDMA applications using SOI technology
A linear CMOS power amplifier (PA) is developed for wideband code-division multiple-access (W-CDMA) application using 0.18 µm silicon-on-insulator (SOI) technology. By adopting a quadruple-stacked FET structure, 1W of output power is achieved at 4V supply voltage. A negative capacitance circuit is e...
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| Veröffentlicht in: | Electronics letters 2013-04, Vol.49 (8), p.564-566 |
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| container_title | Electronics letters |
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| creator | Jeon, M.-S Woo, J Kim, U Kwon, Y |
| description | A linear CMOS power amplifier (PA) is developed for wideband code-division multiple-access (W-CDMA) application using 0.18 µm silicon-on-insulator (SOI) technology. By adopting a quadruple-stacked FET structure, 1W of output power is achieved at 4V supply voltage. A negative capacitance circuit is employed to maximise the efficiency of the PA by cancelling out the excessive capacitance at the source terminal of the common-gate stage. Besides, a lineariser based on the variable capacitor circuit is added to reduce the inherent AM-PM distortion of the CMOS FET. Using W-CDMA modulation at 837MHz, the fabricated PA module delivers a PAE of 47.5% and an adjacent channel leakage ratio of − 36dBc at the output power of 27.1dBm. |
| doi_str_mv | 10.1049/el.2012.3627 |
| format | Article |
| fullrecord | <record><control><sourceid>wiley_24P</sourceid><recordid>TN_cdi_iet_journals_10_1049_el_2012_3627</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ELL2BF00355</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4115-5c0f9b36dd3331330c6d7d0622255cc0b7a2bce9be05a266d3b56c125092d5b63</originalsourceid><addsrcrecordid>eNp9kEFLwzAUx4MoOOZufoAcFDzY-V7SZPQ45-YGHTtM0YuUNE22aNeWZmP029sxEQ_qKY_w-_9470_IJUIfIYzuTN5ngKzPJRuckA5yAUGE-HpKOgDIA4FReE563rsUMMRQQogd8jZ1q3VgrHXamUI3dDRfLKnfKv1hsmAyfqJVuTc1VZsqd9a1ky1r-hKMHuZDqqr2U6utKwtPd94VK7pczOjW6HVR5uWquSBnVuXe9L7eLnlulaNpEC8eZ6NhHOgQUQRCg41SLrOMc46cg5bZIAPJGBNCa0gHiqXaRKkBoZiUGU-F1MgERCwTqeRdcnv06rr0vjY2qWq3UXWTICSHdhKTJ4d2kkM7LX59xCvltcptrQrt_HemJXAQMWg5ceT2LjfNv85kHMfsfgLAhWhzN8ecM9vkvdzVRXv8X6tc_YKO4x_mKrP8E4Tui78</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High-efficiency CMOS stacked-FET power amplifier for W-CDMA applications using SOI technology</title><source>Wiley Online Library Open Access</source><creator>Jeon, M.-S ; Woo, J ; Kim, U ; Kwon, Y</creator><creatorcontrib>Jeon, M.-S ; Woo, J ; Kim, U ; Kwon, Y</creatorcontrib><description>A linear CMOS power amplifier (PA) is developed for wideband code-division multiple-access (W-CDMA) application using 0.18 µm silicon-on-insulator (SOI) technology. By adopting a quadruple-stacked FET structure, 1W of output power is achieved at 4V supply voltage. A negative capacitance circuit is employed to maximise the efficiency of the PA by cancelling out the excessive capacitance at the source terminal of the common-gate stage. Besides, a lineariser based on the variable capacitor circuit is added to reduce the inherent AM-PM distortion of the CMOS FET. Using W-CDMA modulation at 837MHz, the fabricated PA module delivers a PAE of 47.5% and an adjacent channel leakage ratio of − 36dBc at the output power of 27.1dBm.</description><identifier>ISSN: 0013-5194</identifier><identifier>ISSN: 1350-911X</identifier><identifier>EISSN: 1350-911X</identifier><identifier>DOI: 10.1049/el.2012.3627</identifier><identifier>CODEN: ELLEAK</identifier><language>eng</language><publisher>Stevenage: The Institution of Engineering and Technology</publisher><subject>Amplifiers ; AM‐PM distortion ; Applied sciences ; capacitance ; capacitors ; channel leakage ratio ; Circuit properties ; CMOS analogue integrated circuits ; CMOS FET ; code division multiple access ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; excessive capacitance ; fabricated PA module ; frequency 837 MHz ; high‐efficiency CMOS stacked‐FET power amplifier ; linear CMOS power amplifier ; lineariser ; MOSFET ; negative capacitance circuit ; PAE ; power 1 W ; power amplifiers ; quadruple‐stacked FET structure ; Radiocommunications ; silicon‐on‐insulator ; silicon‐on‐insulator technology ; size 0.18 mum ; SOI technology ; source terminal ; Telecommunications ; Telecommunications and information theory ; variable capacitor circuit ; voltage 4 V ; wideband amplifiers ; wideband code‐division multiple‐access apllication ; Wireless communications ; W‐CDMA application ; W‐CDMA modulation</subject><ispartof>Electronics letters, 2013-04, Vol.49 (8), p.564-566</ispartof><rights>The Institution of Engineering and Technology</rights><rights>2020 The Institution of Engineering and Technology</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4115-5c0f9b36dd3331330c6d7d0622255cc0b7a2bce9be05a266d3b56c125092d5b63</citedby><cites>FETCH-LOGICAL-c4115-5c0f9b36dd3331330c6d7d0622255cc0b7a2bce9be05a266d3b56c125092d5b63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1049%2Fel.2012.3627$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1049%2Fel.2012.3627$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,11541,27901,27902,45550,45551,46027,46451</link.rule.ids><linktorsrc>$$Uhttps://onlinelibrary.wiley.com/doi/abs/10.1049%2Fel.2012.3627$$EView_record_in_Wiley-Blackwell$$FView_record_in_$$GWiley-Blackwell</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27317920$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jeon, M.-S</creatorcontrib><creatorcontrib>Woo, J</creatorcontrib><creatorcontrib>Kim, U</creatorcontrib><creatorcontrib>Kwon, Y</creatorcontrib><title>High-efficiency CMOS stacked-FET power amplifier for W-CDMA applications using SOI technology</title><title>Electronics letters</title><description>A linear CMOS power amplifier (PA) is developed for wideband code-division multiple-access (W-CDMA) application using 0.18 µm silicon-on-insulator (SOI) technology. By adopting a quadruple-stacked FET structure, 1W of output power is achieved at 4V supply voltage. A negative capacitance circuit is employed to maximise the efficiency of the PA by cancelling out the excessive capacitance at the source terminal of the common-gate stage. Besides, a lineariser based on the variable capacitor circuit is added to reduce the inherent AM-PM distortion of the CMOS FET. Using W-CDMA modulation at 837MHz, the fabricated PA module delivers a PAE of 47.5% and an adjacent channel leakage ratio of − 36dBc at the output power of 27.1dBm.</description><subject>Amplifiers</subject><subject>AM‐PM distortion</subject><subject>Applied sciences</subject><subject>capacitance</subject><subject>capacitors</subject><subject>channel leakage ratio</subject><subject>Circuit properties</subject><subject>CMOS analogue integrated circuits</subject><subject>CMOS FET</subject><subject>code division multiple access</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>excessive capacitance</subject><subject>fabricated PA module</subject><subject>frequency 837 MHz</subject><subject>high‐efficiency CMOS stacked‐FET power amplifier</subject><subject>linear CMOS power amplifier</subject><subject>lineariser</subject><subject>MOSFET</subject><subject>negative capacitance circuit</subject><subject>PAE</subject><subject>power 1 W</subject><subject>power amplifiers</subject><subject>quadruple‐stacked FET structure</subject><subject>Radiocommunications</subject><subject>silicon‐on‐insulator</subject><subject>silicon‐on‐insulator technology</subject><subject>size 0.18 mum</subject><subject>SOI technology</subject><subject>source terminal</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><subject>variable capacitor circuit</subject><subject>voltage 4 V</subject><subject>wideband amplifiers</subject><subject>wideband code‐division multiple‐access apllication</subject><subject>Wireless communications</subject><subject>W‐CDMA application</subject><subject>W‐CDMA modulation</subject><issn>0013-5194</issn><issn>1350-911X</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLwzAUx4MoOOZufoAcFDzY-V7SZPQ45-YGHTtM0YuUNE22aNeWZmP029sxEQ_qKY_w-_9470_IJUIfIYzuTN5ngKzPJRuckA5yAUGE-HpKOgDIA4FReE563rsUMMRQQogd8jZ1q3VgrHXamUI3dDRfLKnfKv1hsmAyfqJVuTc1VZsqd9a1ky1r-hKMHuZDqqr2U6utKwtPd94VK7pczOjW6HVR5uWquSBnVuXe9L7eLnlulaNpEC8eZ6NhHOgQUQRCg41SLrOMc46cg5bZIAPJGBNCa0gHiqXaRKkBoZiUGU-F1MgERCwTqeRdcnv06rr0vjY2qWq3UXWTICSHdhKTJ4d2kkM7LX59xCvltcptrQrt_HemJXAQMWg5ceT2LjfNv85kHMfsfgLAhWhzN8ecM9vkvdzVRXv8X6tc_YKO4x_mKrP8E4Tui78</recordid><startdate>20130411</startdate><enddate>20130411</enddate><creator>Jeon, M.-S</creator><creator>Woo, J</creator><creator>Kim, U</creator><creator>Kwon, Y</creator><general>The Institution of Engineering and Technology</general><general>Institution of Engineering and Technology</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130411</creationdate><title>High-efficiency CMOS stacked-FET power amplifier for W-CDMA applications using SOI technology</title><author>Jeon, M.-S ; Woo, J ; Kim, U ; Kwon, Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4115-5c0f9b36dd3331330c6d7d0622255cc0b7a2bce9be05a266d3b56c125092d5b63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Amplifiers</topic><topic>AM‐PM distortion</topic><topic>Applied sciences</topic><topic>capacitance</topic><topic>capacitors</topic><topic>channel leakage ratio</topic><topic>Circuit properties</topic><topic>CMOS analogue integrated circuits</topic><topic>CMOS FET</topic><topic>code division multiple access</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>excessive capacitance</topic><topic>fabricated PA module</topic><topic>frequency 837 MHz</topic><topic>high‐efficiency CMOS stacked‐FET power amplifier</topic><topic>linear CMOS power amplifier</topic><topic>lineariser</topic><topic>MOSFET</topic><topic>negative capacitance circuit</topic><topic>PAE</topic><topic>power 1 W</topic><topic>power amplifiers</topic><topic>quadruple‐stacked FET structure</topic><topic>Radiocommunications</topic><topic>silicon‐on‐insulator</topic><topic>silicon‐on‐insulator technology</topic><topic>size 0.18 mum</topic><topic>SOI technology</topic><topic>source terminal</topic><topic>Telecommunications</topic><topic>Telecommunications and information theory</topic><topic>variable capacitor circuit</topic><topic>voltage 4 V</topic><topic>wideband amplifiers</topic><topic>wideband code‐division multiple‐access apllication</topic><topic>Wireless communications</topic><topic>W‐CDMA application</topic><topic>W‐CDMA modulation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jeon, M.-S</creatorcontrib><creatorcontrib>Woo, J</creatorcontrib><creatorcontrib>Kim, U</creatorcontrib><creatorcontrib>Kwon, Y</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jeon, M.-S</au><au>Woo, J</au><au>Kim, U</au><au>Kwon, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-efficiency CMOS stacked-FET power amplifier for W-CDMA applications using SOI technology</atitle><jtitle>Electronics letters</jtitle><date>2013-04-11</date><risdate>2013</risdate><volume>49</volume><issue>8</issue><spage>564</spage><epage>566</epage><pages>564-566</pages><issn>0013-5194</issn><issn>1350-911X</issn><eissn>1350-911X</eissn><coden>ELLEAK</coden><abstract>A linear CMOS power amplifier (PA) is developed for wideband code-division multiple-access (W-CDMA) application using 0.18 µm silicon-on-insulator (SOI) technology. By adopting a quadruple-stacked FET structure, 1W of output power is achieved at 4V supply voltage. A negative capacitance circuit is employed to maximise the efficiency of the PA by cancelling out the excessive capacitance at the source terminal of the common-gate stage. Besides, a lineariser based on the variable capacitor circuit is added to reduce the inherent AM-PM distortion of the CMOS FET. Using W-CDMA modulation at 837MHz, the fabricated PA module delivers a PAE of 47.5% and an adjacent channel leakage ratio of − 36dBc at the output power of 27.1dBm.</abstract><cop>Stevenage</cop><pub>The Institution of Engineering and Technology</pub><doi>10.1049/el.2012.3627</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Amplifiers AM‐PM distortion Applied sciences capacitance capacitors channel leakage ratio Circuit properties CMOS analogue integrated circuits CMOS FET code division multiple access Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology excessive capacitance fabricated PA module frequency 837 MHz high‐efficiency CMOS stacked‐FET power amplifier linear CMOS power amplifier lineariser MOSFET negative capacitance circuit PAE power 1 W power amplifiers quadruple‐stacked FET structure Radiocommunications silicon‐on‐insulator silicon‐on‐insulator technology size 0.18 mum SOI technology source terminal Telecommunications Telecommunications and information theory variable capacitor circuit voltage 4 V wideband amplifiers wideband code‐division multiple‐access apllication Wireless communications W‐CDMA application W‐CDMA modulation |
| title | High-efficiency CMOS stacked-FET power amplifier for W-CDMA applications using SOI technology |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T21%3A11%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wiley_24P&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-efficiency%20CMOS%20stacked-FET%20power%20amplifier%20for%20W-CDMA%20applications%20using%20SOI%20technology&rft.jtitle=Electronics%20letters&rft.au=Jeon,%20M.-S&rft.date=2013-04-11&rft.volume=49&rft.issue=8&rft.spage=564&rft.epage=566&rft.pages=564-566&rft.issn=0013-5194&rft.eissn=1350-911X&rft.coden=ELLEAK&rft_id=info:doi/10.1049/el.2012.3627&rft_dat=%3Cwiley_24P%3EELL2BF00355%3C/wiley_24P%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |