A New Methodology to Analyze Carrier Transport Properties for InxGa1−xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation

Conventional techniques to characterize the carrier transport properties in high-electron-mobility transistors do not account for the effect of each individual unit process and device integration, and can be challenging to use for short-channel devices. To overcome this, we have developed a new technique that consists of measurement and analysis of the transconductance scaling behavior. The proposed {g}_{m} modeling technique yielded the effective mobility, \mu _{n\_{}{\textit {eff}}} , and saturation velocity, {v}_{\textit {sat}} for fabricated InxGa _{{1}-{x}} As Quantum-Well (QW) HEMTs, correlating the carrier transport properties to the device characteristics. This helps illuminate the physics of the carrier transport properties of HEMTs from the mobility relevant to the velocity saturation regimes.