Substrate parasitic extraction for RF integrated circuits

Summary form only given. Accurately predicting the impact of substrate parasitics in Radio Frequency (RF) design with simulations is one of the major concerns to ensure first silicon success in a System on Chip (SoC) approach. The practical design experience of a 2 GHz RF front-end circuit (designed...

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Hauptverfasser: Cathelin, A., Leclercq, Y., Saias, D., Belot, D., Clement, F.R.J.
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Saias, D.
Belot, D.
Clement, F.R.J.
description Summary form only given. Accurately predicting the impact of substrate parasitics in Radio Frequency (RF) design with simulations is one of the major concerns to ensure first silicon success in a System on Chip (SoC) approach. The practical design experience of a 2 GHz RF front-end circuit (designed in a 0.35 /spl mu/m SiGe BiCMOS technology), presented here, illustrates how measurements results can be accurately predicted using a substrate parasitic extractor.
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Automatic testing
Circuit simulation
Design automation
Europe
Frequency measurement
Radio frequency
Radiofrequency integrated circuits
RF signals
Signal design
title Substrate parasitic extraction for RF integrated circuits
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