Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N/sub 2/O-grown oxides and NO RTA treatment

Ultra-thin gate dielectrics processed by remote plasma nitridation (RPN) of N/sub 2/O-grown oxides subsequently followed by NO RTA treatment (N/sub 2/O+RPN+NO process) are reported for the first time as a means to extend the reliability scaling limit of SiO/sub 2/- / oxynitride-based gate dielectric...

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Hauptverfasser:	Liu, C.H., Hsiu-Shan Lin, Yu-Yin Lin, Chen, M.G., Pan, T.M., Kao, C.J., Huang, K.T., Lin, S.H., Sheng, Y.C., Wen-Tung Chang, Lee, J.H., Huang, M., Chiung-Sheng Hsiung, Huang-Lu, S., Chen-Chung Hsu, Liang, A.Y., Jenkon Chen, Hsieh, W.Y., Yen, P.W., Chien, S.C., Loh, Y.T., Chang, Y.J., Fu-Tai Liou
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS technology Dielectric devices High K dielectric materials High-K gate dielectrics Leakage current Nitrogen Plasma properties Rapid thermal annealing Rapid thermal processing Scalability
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Zusammenfassung:	Ultra-thin gate dielectrics processed by remote plasma nitridation (RPN) of N/sub 2/O-grown oxides subsequently followed by NO RTA treatment (N/sub 2/O+RPN+NO process) are reported for the first time as a means to extend the reliability scaling limit of SiO/sub 2/- / oxynitride-based gate dielectrics. These films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics of similar thickness (/spl sim/1.4 nm) fabricated by different processes.
DOI:	10.1109/RELPHY.2002.996646