High-Performance Thin-Film Transistors With Sputtered IGZO/Ga \text O \text Heterojunction

High-performance thin-film transistors (TFTs) with amorphous indium gallium zinc oxide (IGZO)/Ga _\text{2} O _\text{3} heterojunction and the reference TFTs with single-layer IGZO, Ga _\text{2} O _\text{3} , and stacked IGZO/Al _\text{2} O _\text{3} layers are fabricated by sputtering. The as-deposited IGZO/Ga _\text{2} O _\text{3} TFT shows high ON current of 0.97 \mu A \cdot \mu m ^{-\text{1}} at a drain voltage of 1 V, which is \text{7} orders of magnitude higher than that of the reference single layer TFTs and high mobility of 22.2 cm ^{\text{2}}{\cdot} V ^{-\text{1}}{\cdot} s ^{-\text{1}} , which is twice of that of the reference as-deposited IGZO/Al _\text{2} O _\text{3} TFT (11.5 cm ^{\text{2}}{\cdot} V ^{-\text{1}}{\cdot} s ^{-\text{1}} ). Combining such superior conductivity of the IGZO/Ga _\text{2} O _\text{3} TFT with the energy-le