A 512 Mb NROM flash data storage memory with 8 MB/s data rate

The NROM technology is applied to EEPROM, flash, and data storage product lines. All the products are based on the two-bit-per-cell core technology, using common design concepts, algorithms, circuits, and the same process architecture. Differing product requirements emphasize the versatility of the...

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Veröffentlicht in:	2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) 2002, Vol.1, p.100-101 vol.1
Hauptverfasser:	Maayan, E., Dvir, R., Shor, J., Polansky, Y., Sofer, Y., Bloom, I., Avni, D., Eitan, B., Cohen, Z., Meyassed, M., Alpern, Y., Palm, H., v Kamienski, E.S., Haibach, P., Caspary, D., Riedel, S., Knofler, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Channel hot electron injection Dielectric devices Flash memory Hot carriers MOSFET circuits Nonvolatile memory Parallel programming Radio access networks Tunneling Voltage
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Beschreibung
Zusammenfassung:	The NROM technology is applied to EEPROM, flash, and data storage product lines. All the products are based on the two-bit-per-cell core technology, using common design concepts, algorithms, circuits, and the same process architecture. Differing product requirements emphasize the versatility of the concept.
ISSN:	0193-6530
DOI:	10.1109/ISSCC.2002.992958