A CCD image sensor of 1 Mframes/s for continuous image capturing 103 frames

A single-chip CCD image sensor captures >100 successive images at >1 Mframes/s. The pixel count of the test chip is 312/spl times/260 (=81,120) pixels. Charge handling capacity is 40 k electrons. Grey levels are 10 b. Fill factor is 13%. An on-chip overwriting mechanism makes possible continuo...

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Veröffentlicht in:	2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) 2002, Vol.1, p.46-443 vol.1
Hauptverfasser:	Goji Etoh, T., Poggemann, D., Ruckelshausen, A., Theuwissen, A., Kreider, G., Folkerts, H.-O., Mutoh, H., Kondo, Y., Maruno, H., Takubo, K., Soya, H., Takehara, K., Okinaka, T., Takano, Y., Reisinger, T., Lohmann, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge coupled devices Charge-coupled image sensors Image generation Image sensors Image storage Intersymbol interference Pixel Signal generators Solid state circuits Switches
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Beschreibung
Zusammenfassung:	A single-chip CCD image sensor captures >100 successive images at >1 Mframes/s. The pixel count of the test chip is 312/spl times/260 (=81,120) pixels. Charge handling capacity is 40 k electrons. Grey levels are 10 b. Fill factor is 13%. An on-chip overwriting mechanism makes possible continuous recording of the latest image signals, draining the old ones to the substrate.
ISSN:	0193-6530
DOI:	10.1109/ISSCC.2002.992931