Large-signal modeling of microwave gallium nitride-based HFETs

Large-signal modeling of microwave gallium nitride-based HFETs

This paper describes the large-signal model of the heterojunction field-effect transistors (HFET) based on Al/sub x/Ga/sub 1-x/N/GaN heterostructure used as control components for high-power microwave and RF control devices (switches, attenuators, phase-shifters, etc.). Its use should extend power l...

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Hauptverfasser: Drozdovski, N.V., Caverly, R.H., Quinn, M.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Attenuators
FETs
Gallium nitride
HEMTs
Heterojunctions
III-V semiconductor materials
Microwave devices
MODFETs
Radio frequency
Switches
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Beschreibung
Zusammenfassung:This paper describes the large-signal model of the heterojunction field-effect transistors (HFET) based on Al/sub x/Ga/sub 1-x/N/GaN heterostructure used as control components for high-power microwave and RF control devices (switches, attenuators, phase-shifters, etc.). Its use should extend power level of FET-based RF and microwave.
DOI:10.1109/APMC.2001.985633