Design of circular waveguide transition with circular profile in electron cyclotron resonance plasma etching system

Design of circular waveguide transition with circular profile in electron cyclotron resonance plasma etching system

A circular waveguide transition for 2.45 GHz ECR (electron cyclotron resonance) plasma etching system is designed. This circular waveguide transition is constructed in its longitudinal profile by two circular curves. In addition, two circular curves tangent values are continuous at the connected poi...

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Hauptverfasser: Jan-Dong Tseng, Chi-Chan Lin
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cyclotrons
Electrons
Etching
Plasma applications
Plasma density
Plasma materials processing
Plasma sources
Plasma waves
Resonance
Waveguide transitions
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Chi-Chan Lin
description A circular waveguide transition for 2.45 GHz ECR (electron cyclotron resonance) plasma etching system is designed. This circular waveguide transition is constructed in its longitudinal profile by two circular curves. In addition, two circular curves tangent values are continuous at the connected point. The magnitude of the electric field at the output of the waveguide transition for three different curvature values are investigated. The best field uniformity of electric field in the case we discussed is found.
doi_str_mv 10.1109/APMC.2001.985433
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This circular waveguide transition is constructed in its longitudinal profile by two circular curves. In addition, two circular curves tangent values are continuous at the connected point. The magnitude of the electric field at the output of the waveguide transition for three different curvature values are investigated. The best field uniformity of electric field in the case we discussed is found.</description><identifier>ISBN: 9780780371385</identifier><identifier>ISBN: 0780371380</identifier><identifier>DOI: 10.1109/APMC.2001.985433</identifier><language>eng</language><publisher>IEEE</publisher><subject>Cyclotrons ; Electrons ; Etching ; Plasma applications ; Plasma density ; Plasma materials processing ; Plasma sources ; Plasma waves ; Resonance ; Waveguide transitions</subject><ispartof>APMC 2001. 2001 Asia-Pacific Microwave Conference (Cat. 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No.01TH8577)</title><addtitle>APMC</addtitle><description>A circular waveguide transition for 2.45 GHz ECR (electron cyclotron resonance) plasma etching system is designed. This circular waveguide transition is constructed in its longitudinal profile by two circular curves. In addition, two circular curves tangent values are continuous at the connected point. The magnitude of the electric field at the output of the waveguide transition for three different curvature values are investigated. The best field uniformity of electric field in the case we discussed is found.</description><subject>Cyclotrons</subject><subject>Electrons</subject><subject>Etching</subject><subject>Plasma applications</subject><subject>Plasma density</subject><subject>Plasma materials processing</subject><subject>Plasma sources</subject><subject>Plasma waves</subject><subject>Resonance</subject><subject>Waveguide transitions</subject><isbn>9780780371385</isbn><isbn>0780371380</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFUEtLxDAYDIigrL2Lp_yB1jyaJj0u9bWwogc9L0n6tRtp0yXJuvTfW1zBYWDmMAzMIHRLSUEpqe_X769NwQihRa1EyfkFymqpyEIuKVfiCmUxfpEFpShLWV-j-ADR9R5PHbYu2OOgAz7pb-iPrgWcgvbRJTd5fHJp_x85hKlzA2DnMQxgU1gSdrbD9OsCxMlrbwEfBh1HjSHZvfM9jnNMMN6gy04PEbI_XaHPp8eP5iXfvj1vmvU2d1SylAthKtlqpVglNeM1ZSAl0bIyBizrtFBAVSlqUxnZWaOkYbblclmqFK06wlfo7tzrAGB3CG7UYd6dn-E_yy1b3Q</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Jan-Dong Tseng</creator><creator>Chi-Chan Lin</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2001</creationdate><title>Design of circular waveguide transition with circular profile in electron cyclotron resonance plasma etching system</title><author>Jan-Dong Tseng ; Chi-Chan Lin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-55b67da88267a23912e770a76bbec2fa58e18459b6b7fcb87b2cd373718816f03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Cyclotrons</topic><topic>Electrons</topic><topic>Etching</topic><topic>Plasma applications</topic><topic>Plasma density</topic><topic>Plasma materials processing</topic><topic>Plasma sources</topic><topic>Plasma waves</topic><topic>Resonance</topic><topic>Waveguide transitions</topic><toplevel>online_resources</toplevel><creatorcontrib>Jan-Dong Tseng</creatorcontrib><creatorcontrib>Chi-Chan Lin</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jan-Dong Tseng</au><au>Chi-Chan Lin</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Design of circular waveguide transition with circular profile in electron cyclotron resonance plasma etching system</atitle><btitle>APMC 2001. 2001 Asia-Pacific Microwave Conference (Cat. No.01TH8577)</btitle><stitle>APMC</stitle><date>2001</date><risdate>2001</risdate><volume>2</volume><spage>550</spage><epage>553 vol.2</epage><pages>550-553 vol.2</pages><isbn>9780780371385</isbn><isbn>0780371380</isbn><abstract>A circular waveguide transition for 2.45 GHz ECR (electron cyclotron resonance) plasma etching system is designed. This circular waveguide transition is constructed in its longitudinal profile by two circular curves. In addition, two circular curves tangent values are continuous at the connected point. The magnitude of the electric field at the output of the waveguide transition for three different curvature values are investigated. The best field uniformity of electric field in the case we discussed is found.</abstract><pub>IEEE</pub><doi>10.1109/APMC.2001.985433</doi></addata></record>
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subjects Cyclotrons
Electrons
Etching
Plasma applications
Plasma density
Plasma materials processing
Plasma sources
Plasma waves
Resonance
Waveguide transitions
title Design of circular waveguide transition with circular profile in electron cyclotron resonance plasma etching system
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