Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process

Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process

We have identified atomic scale processes involved in the so called "interface trap transformation" process. These changes involve the generation of a silicon "dangling bond" defect called P/sub b1/. This defect is somewhat different in electronic density of states and slightly d...

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Veröffentlicht in:IEEE transactions on nuclear science 2001-12, Vol.48 (6), p.2131-2135
Hauptverfasser: Lenahan, P.M., Mishima, T.D., Jumper, J., Fogarty, T.N., Wilkins, R.T.
Format: Artikel
Sprache:eng
Schlagworte:
Atomic measurements
Atomic structure
Bonding
Defects
Density measurement
Density of states
Electron traps
Electronics
Extraterrestrial measurements
MOSFET circuits
Paramagnetic resonance
Photonic band gap
Physics
Silicon
Silicon dioxide
Transformations
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Beschreibung
Zusammenfassung:We have identified atomic scale processes involved in the so called "interface trap transformation" process. These changes involve the generation of a silicon "dangling bond" defect called P/sub b1/. This defect is somewhat different in electronic density of states and slightly different in physical structure than the dominating radiation induced Si/SiO/sub 2/ interface trap defect, the P/sub b0/ center.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.983184