Effect of additional HCl flow on the surface morphology of GaN grown on sapphire by HVPE
The effect of additional HCl on the surface morphology of HVPE GaN was investigated. The introduction of additional HCl to the growth zone altered the polar growth direction at the initial growth stage, and finally the Ga-face polarity GaN films with smooth surface were obtained.
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| container_end_page | 1197 vol.2 |
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| creator | Xiangqian Xiu Rong Zhang Dianqing Lu Shulin Gu Bo Shen Yi Shi Zheng Youdou |
| description | The effect of additional HCl on the surface morphology of HVPE GaN was investigated. The introduction of additional HCl to the growth zone altered the polar growth direction at the initial growth stage, and finally the Ga-face polarity GaN films with smooth surface were obtained. |
| doi_str_mv | 10.1109/ICSICT.2001.982113 |
| format | Conference Proceeding |
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| identifier | ISBN: 0780365208 |
| ispartof | 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2001, Vol.2, p.1195-1197 vol.2 |
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| language | eng |
| recordid | cdi_ieee_primary_982113 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Etching Gallium nitride Human computer interaction Optical devices Optical films Rough surfaces Scanning electron microscopy Substrates Surface morphology Surface roughness |
| title | Effect of additional HCl flow on the surface morphology of GaN grown on sapphire by HVPE |
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