Effect of additional HCl flow on the surface morphology of GaN grown on sapphire by HVPE

The effect of additional HCl on the surface morphology of HVPE GaN was investigated. The introduction of additional HCl to the growth zone altered the polar growth direction at the initial growth stage, and finally the Ga-face polarity GaN films with smooth surface were obtained.

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Bibliographische Detailangaben
Hauptverfasser:	Xiangqian Xiu, Rong Zhang, Dianqing Lu, Shulin Gu, Bo Shen, Yi Shi, Zheng Youdou
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Etching Gallium nitride Human computer interaction Optical devices Optical films Rough surfaces Scanning electron microscopy Substrates Surface morphology Surface roughness
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Beschreibung
Zusammenfassung:	The effect of additional HCl on the surface morphology of HVPE GaN was investigated. The introduction of additional HCl to the growth zone altered the polar growth direction at the initial growth stage, and finally the Ga-face polarity GaN films with smooth surface were obtained.
DOI:	10.1109/ICSICT.2001.982113