SiGe HV/CVD epitaxy growth on patterned Si substrate

This letter investigates the SiGe epitaxy growth on patterned Si substrate (patterned SiO/sub 2/ on Si substrate), and shows that the crystal quality of the SiGe/Si interface is excellent and that the SiGe epitaxial thin film on Si substrate in the patterned window is a single crystal.

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Liu Zhi-nong, Chen Pei-yi, Yan Yun-jie, Tsien Pei-Hsin
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS technology Epitaxial growth Germanium silicon alloys Heterojunction bipolar transistors Integrated circuit technology Scanning electron microscopy Semiconductor thin films Silicon germanium Substrates Wireless communication
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	This letter investigates the SiGe epitaxy growth on patterned Si substrate (patterned SiO/sub 2/ on Si substrate), and shows that the crystal quality of the SiGe/Si interface is excellent and that the SiGe epitaxial thin film on Si substrate in the patterned window is a single crystal.
DOI:	10.1109/ICSICT.2001.981550