Development of SiGe/Si HBT

The development of SiGe/Si HBT in the world is briefly reviewed and our recent research progress in high frequency SiGe/Si HBT is reported. A novel modulation doped quantum well base SiGe/Si HBT is proposed and fabricated. This new structure can reduce the base resistance effectively without increas...

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Bibliographische Detailangaben
Hauptverfasser:	Guangdi Shen, Chen Xu, Jianxin Chen, Deshu Zou, Chen Shi, Jun Deng, Jingyu Du, Guo Gao
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS technology Costs Doping FET integrated circuits Germanium silicon alloys Heterojunction bipolar transistors III-V semiconductor materials Microwave transistors Radio frequency Silicon germanium
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Beschreibung
Zusammenfassung:	The development of SiGe/Si HBT in the world is briefly reviewed and our recent research progress in high frequency SiGe/Si HBT is reported. A novel modulation doped quantum well base SiGe/Si HBT is proposed and fabricated. This new structure can reduce the base resistance effectively without increasing the average doping level in base. SiGe/Si HBT with /spl beta/ac over 24000 at 77 K was designed and fabricated. The effects of parasitic barrier induced by boron segregation and outdiffusion in the base were carefully studied, and reasonable width of i-SiGe spacers to prevent these phenomena was obtained by experiment and simulation. The nonideal current of Ib and Ic and their effects on the performance of the device were investigated.
DOI:	10.1109/ICSICT.2001.981546