JVD silicon nitride as tunnel dielectric in p-channel flash memory
High-quality jet vapor deposition nitride is investigated as a tunnel dielectric for flash memory device application. Compared to control devices with SiO/sub 2/ tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devi...
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| Veröffentlicht in: | IEEE electron device letters 2002-02, Vol.23 (2), p.91-93 |
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| container_end_page | 93 |
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| container_issue | 2 |
| container_start_page | 91 |
| container_title | IEEE electron device letters |
| container_volume | 23 |
| creator | She, Min King, Tsu-Jae Hu, Chenming Zhu, Wenjuan Luo, Zhijiong Han, Jin-Ping Ma, Tso-Ping |
| description | High-quality jet vapor deposition nitride is investigated as a tunnel dielectric for flash memory device application. Compared to control devices with SiO/sub 2/ tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devices can be programmed by hot electrons and erased by hot holes, or vice versa. Multilevel programming capability is shown. |
| doi_str_mv | 10.1109/55.981316 |
| format | Article |
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Compared to control devices with SiO/sub 2/ tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devices can be programmed by hot electrons and erased by hot holes, or vice versa. Multilevel programming capability is shown.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.981316</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Chemical vapor deposition ; CMOS technology ; Devices ; Dielectric devices ; Dielectrics ; Flash memory ; Flash memory (computers) ; Hot carriers ; Multilevel ; Nonvolatile memory ; Programming ; Secondary generated hot electron injection ; Silicon ; Threshold voltage ; Tunnels (transportation) ; Vapor deposition ; Voltage ; Voltage control</subject><ispartof>IEEE electron device letters, 2002-02, Vol.23 (2), p.91-93</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Compared to control devices with SiO/sub 2/ tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devices can be programmed by hot electrons and erased by hot holes, or vice versa. Multilevel programming capability is shown.</description><subject>Chemical vapor deposition</subject><subject>CMOS technology</subject><subject>Devices</subject><subject>Dielectric devices</subject><subject>Dielectrics</subject><subject>Flash memory</subject><subject>Flash memory (computers)</subject><subject>Hot carriers</subject><subject>Multilevel</subject><subject>Nonvolatile memory</subject><subject>Programming</subject><subject>Secondary generated hot electron injection</subject><subject>Silicon</subject><subject>Threshold voltage</subject><subject>Tunnels (transportation)</subject><subject>Vapor deposition</subject><subject>Voltage</subject><subject>Voltage control</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0T1PwzAQBmALgUQpDKxMEQOIIcXnb49QvlWJBVgtx3FUV2lS4mTovyclFQMDdDlL50evTncInQKeAGB9zflEK6Ag9tAIOFcp5oLuoxGWDFIKWByioxgXGANjko3Q7cvHXRJDGVxdJVVom5D7xMak7arKl0kefOld33VJqJJV6ub2u1-UNs6TpV_WzfoYHRS2jP5k-47R-8P92_Qpnb0-Pk9vZqljRLepzbXLmQLmvXUZyQCk54ppAaAJ1ZhInBXOEWelBYJZoUQumMu064vICB2jyyF31dSfnY-tWYbofFnaytddNBpLzShVvJcXf0qipKIc9A6QMqGF_B9KAkDVDokSJHC2mfH8F1zUXVP1CzRaEyVYH9ajqwG5po6x8YVZNWFpm7UBbDb3Npyb4d69PRts8N7_uO3nF9Mmopk</recordid><startdate>20020201</startdate><enddate>20020201</enddate><creator>She, Min</creator><creator>King, Tsu-Jae</creator><creator>Hu, Chenming</creator><creator>Zhu, Wenjuan</creator><creator>Luo, Zhijiong</creator><creator>Han, Jin-Ping</creator><creator>Ma, Tso-Ping</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2002-02, Vol.23 (2), p.91-93 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Chemical vapor deposition CMOS technology Devices Dielectric devices Dielectrics Flash memory Flash memory (computers) Hot carriers Multilevel Nonvolatile memory Programming Secondary generated hot electron injection Silicon Threshold voltage Tunnels (transportation) Vapor deposition Voltage Voltage control |
| title | JVD silicon nitride as tunnel dielectric in p-channel flash memory |
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