JVD silicon nitride as tunnel dielectric in p-channel flash memory

JVD silicon nitride as tunnel dielectric in p-channel flash memory

High-quality jet vapor deposition nitride is investigated as a tunnel dielectric for flash memory device application. Compared to control devices with SiO/sub 2/ tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devi...

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Veröffentlicht in:IEEE electron device letters 2002-02, Vol.23 (2), p.91-93
Hauptverfasser: She, Min, King, Tsu-Jae, Hu, Chenming, Zhu, Wenjuan, Luo, Zhijiong, Han, Jin-Ping, Ma, Tso-Ping
Format: Artikel
Sprache:eng
Schlagworte:
Chemical vapor deposition
CMOS technology
Devices
Dielectric devices
Dielectrics
Flash memory
Flash memory (computers)
Hot carriers
Multilevel
Nonvolatile memory
Programming
Secondary generated hot electron injection
Silicon
Threshold voltage
Tunnels (transportation)
Vapor deposition
Voltage
Voltage control
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Zusammenfassung:High-quality jet vapor deposition nitride is investigated as a tunnel dielectric for flash memory device application. Compared to control devices with SiO/sub 2/ tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devices can be programmed by hot electrons and erased by hot holes, or vice versa. Multilevel programming capability is shown.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.981316