Proposal and Simulation of Ga2O3 MOSFET With PN Heterojunction Structure for High-Performance E-Mode Operation

In this article, a novel device structure of an enhancement-mode (E-mode) Ga 2 O 3 MOSFET is proposed based on the combination of the p-NiO/n-Ga 2 O 3 heterojunction (PN-HJ) structure and tested through a TCAD simulation. The carrier transport model, materials implementation, as well as the device crucial parameters are validated against measured experimental data of a depletion-mode (D-mode) Ga 2 O 3 HJ-FET. E-mode Ga 2 O 3 HJ-FET with no gate dielectric exhibits a severe gate leakage current due to the small band offset and fast turn-on of the p-NiO/n-Ga 2 O 3 HJ. The results of adding a thin layer of gate dielectric between the gate electrode and the p-NiO layer along with a carefully designed doping profile show that Ga 2 O 3 PN HJ-MOSFET with gate dielectric is a promising candidate for high-performance E-mode operation. Benefited from the vertical PN HJ depletion effect on the lateral channel, the E-mode Ga 2 O 3 HJ-MOSFET also delivers a high breakdown voltage (BV). With respect to the significant challenge of acquiring p-type Ga 2 O 3 , this work provides new insight into realizing a high-performance E-mode Ga 2 O 3 HJ-MOSFETs for future power conversion applications.