Top-Gated MoS₂ Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO₂ on Mica

Top-gated (TG) molybdenum disulfide (MoS 2 ) field-effect transistors (FETs) suffer from surface damage, unintentional doping, and other defects introduced to the MoS 2 channel during the direct deposition of the gate dielectric. In addition, the delicate MoS 2 cannot withstand high-temperature proc...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-06, Vol.69 (6), p.3477-3482
Hauptverfasser:	Zou, Xiao, Zou, Jiyue, Liu, Lu, Wang, Hongjiu, Xu, Jing-Ping
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Bias Capacitance Damage Dielectrics Ferroelectric HfZrO₂ (HZO) Ferroelectric materials Ferroelectricity Field effect transistors field-effect transistors (FETs) Flakes (defects) Frequency measurement Heterojunctions High temperature Hysteresis Logic gates Mica Molybdenum disulfide multilayer MoS Nanoelectronics negative capacitance Pulsed laser deposition pulsed laser deposition (PLD) Pulsed lasers Semiconductor devices Silicon Substrates Transistors Voltage measurement
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