Demonstration of High Performance Flexible In0.7Ga0.3As MOSFETs Using Liquid Polyimide (LPI) Transfer

In this work, flexible In 0.7 Ga 0.3 As metal-oxide-semiconductor field-effect-transistors (MOSFETs) are demonstrated by utilizing liquid polyimide (LPI) transfer. The flexible In 0.7 Ga 0.3 As MOSFET on polyimide showed excellent logic performances including threshold voltage (V th ) = 0.16 V, subthreshold swing (SS) = 95 mV/dec and drain induced barrier lowering (DIBL) = 64 mV/V with \text{L}_{\mathbf {g}} \text {= 5}\,\, \boldsymbol {\mu }\text{m} at V DS = 0.5 V. In addition, ex-situ bending experiment was employed to demonstrate electro-mechanical performance, which include stable I on /I off ratio and R on from 85 mm to 9 mm of bending radius, and deviation of subthreshold swing is less than 5.3 % under bending radius from 85 mm to 4 mm. Our findings indicate that the LPI transfer method on fabricated devices without additional complex bonding methods would be one of effective solutions to enable flexible III-V compound semiconductor electronics and opto-electronic devices.