Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light-Emitting Diodes

We show that the coexistence of strong internal polarization and large carrier (i.e., electron and hole) effective mass accounts for ~51% of the efficiency droop under high current densities in traditional (hexagonal-phase) indium-gallium-aluminum-nitride (InGaAlN) light-emitting diodes (h-LEDs) com...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-06, Vol.69 (6), p.3240-3245
Hauptverfasser:	Tsai, Yi-Chia, Leburton, Jean-Pierre, Bayram, Can
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Augers Charge carrier processes Cubic phase Current density Effective mass Efficiency efficiency droop Electrons Gallium Hexagonal phase InGaAlN internal polarization Light emitting diodes light-emitting diode (LED) Polarization Radiative recombination Scattering Wave functions
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