Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light-Emitting Diodes
We show that the coexistence of strong internal polarization and large carrier (i.e., electron and hole) effective mass accounts for ~51% of the efficiency droop under high current densities in traditional (hexagonal-phase) indium-gallium-aluminum-nitride (InGaAlN) light-emitting diodes (h-LEDs) com...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2022-06, Vol.69 (6), p.3240-3245 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 3245 |
|---|---|
| container_issue | 6 |
| container_start_page | 3240 |
| container_title | IEEE transactions on electron devices |
| container_volume | 69 |
| creator | Tsai, Yi-Chia Leburton, Jean-Pierre Bayram, Can |
| description | We show that the coexistence of strong internal polarization and large carrier (i.e., electron and hole) effective mass accounts for ~51% of the efficiency droop under high current densities in traditional (hexagonal-phase) indium-gallium-aluminum-nitride (InGaAlN) light-emitting diodes (h-LEDs) compared to cubic-phase InGaAlN LEDs (c-LEDs). Our analysis based on variational technique on c-LEDs predicts an enhancement of the current density at the onset of the droop, inherently present in green c-LEDs. These effects are a consequence of the polarization-free nature and small carrier effective mass of c-LEDs. Our analysis indicates that, by overlooking the electron-hole wave function overlap, the well-known ABC model is suspected to overestimate the Auger coefficient, leading to questionable conclusions on the efficiency droop. In turn, it shows that the c-LED efficiency droop is much immune to the Auger electron-hole asymmetry, the increase in the Auger coefficient, and, thus, efficiency degradation mechanisms. |
| doi_str_mv | 10.1109/TED.2022.3167645 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_9762371</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9762371</ieee_id><sourcerecordid>2669164658</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-f336d65bbea73946a11fc7ee6b61f271085ba04749ed9165be1f5c916dad22c13</originalsourceid><addsrcrecordid>eNo9kM9rwjAUx8PYYM7tPtglsHNdXtImzVG0c4K4Ddw5pGliI9q6pj343y-i7PR-8Pm-Bx-EnoFMAIh82xTzCSWUThhwwdPsBo0gy0Qiecpv0YgQyBPJcnaPHkLYxZGnKR2h9fdgG1P7Zotbh_va4sI5b3xcnvC8a9sj9g2eDaU3-KvWweJls9DT_Rqv_Lbuk-Lg-_6cnvu2suER3Tm9D_bpWsfo573YzD6S1ediOZuuEkMl9IljjFc8K0urBZMp1wDOCGt5ycFRASTPSk1SkUpbSYigBZeZ2FW6otQAG6PXy91j1_4ONvRq1w5dE18qynkEU57lkSIXynRtCJ116tj5g-5OCog6W1PRmjpbU1drMfJyiXhr7T8uBadMAPsDAbtm3Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2669164658</pqid></control><display><type>article</type><title>Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light-Emitting Diodes</title><source>IEEE Electronic Library (IEL)</source><creator>Tsai, Yi-Chia ; Leburton, Jean-Pierre ; Bayram, Can</creator><creatorcontrib>Tsai, Yi-Chia ; Leburton, Jean-Pierre ; Bayram, Can</creatorcontrib><description>We show that the coexistence of strong internal polarization and large carrier (i.e., electron and hole) effective mass accounts for ~51% of the efficiency droop under high current densities in traditional (hexagonal-phase) indium-gallium-aluminum-nitride (InGaAlN) light-emitting diodes (h-LEDs) compared to cubic-phase InGaAlN LEDs (c-LEDs). Our analysis based on variational technique on c-LEDs predicts an enhancement of the current density at the onset of the droop, inherently present in green c-LEDs. These effects are a consequence of the polarization-free nature and small carrier effective mass of c-LEDs. Our analysis indicates that, by overlooking the electron-hole wave function overlap, the well-known ABC model is suspected to overestimate the Auger coefficient, leading to questionable conclusions on the efficiency droop. In turn, it shows that the c-LED efficiency droop is much immune to the Auger electron-hole asymmetry, the increase in the Auger coefficient, and, thus, efficiency degradation mechanisms.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2022.3167645</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum ; Augers ; Charge carrier processes ; Cubic phase ; Current density ; Effective mass ; Efficiency ; efficiency droop ; Electrons ; Gallium ; Hexagonal phase ; InGaAlN ; internal polarization ; Light emitting diodes ; light-emitting diode (LED) ; Polarization ; Radiative recombination ; Scattering ; Wave functions</subject><ispartof>IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3240-3245</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-f336d65bbea73946a11fc7ee6b61f271085ba04749ed9165be1f5c916dad22c13</citedby><cites>FETCH-LOGICAL-c291t-f336d65bbea73946a11fc7ee6b61f271085ba04749ed9165be1f5c916dad22c13</cites><orcidid>0000-0002-3987-1132 ; 0000-0003-2658-9397 ; 0000-0002-8183-5581</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9762371$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27922,27923,54756</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9762371$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Tsai, Yi-Chia</creatorcontrib><creatorcontrib>Leburton, Jean-Pierre</creatorcontrib><creatorcontrib>Bayram, Can</creatorcontrib><title>Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light-Emitting Diodes</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We show that the coexistence of strong internal polarization and large carrier (i.e., electron and hole) effective mass accounts for ~51% of the efficiency droop under high current densities in traditional (hexagonal-phase) indium-gallium-aluminum-nitride (InGaAlN) light-emitting diodes (h-LEDs) compared to cubic-phase InGaAlN LEDs (c-LEDs). Our analysis based on variational technique on c-LEDs predicts an enhancement of the current density at the onset of the droop, inherently present in green c-LEDs. These effects are a consequence of the polarization-free nature and small carrier effective mass of c-LEDs. Our analysis indicates that, by overlooking the electron-hole wave function overlap, the well-known ABC model is suspected to overestimate the Auger coefficient, leading to questionable conclusions on the efficiency droop. In turn, it shows that the c-LED efficiency droop is much immune to the Auger electron-hole asymmetry, the increase in the Auger coefficient, and, thus, efficiency degradation mechanisms.</description><subject>Aluminum</subject><subject>Augers</subject><subject>Charge carrier processes</subject><subject>Cubic phase</subject><subject>Current density</subject><subject>Effective mass</subject><subject>Efficiency</subject><subject>efficiency droop</subject><subject>Electrons</subject><subject>Gallium</subject><subject>Hexagonal phase</subject><subject>InGaAlN</subject><subject>internal polarization</subject><subject>Light emitting diodes</subject><subject>light-emitting diode (LED)</subject><subject>Polarization</subject><subject>Radiative recombination</subject><subject>Scattering</subject><subject>Wave functions</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM9rwjAUx8PYYM7tPtglsHNdXtImzVG0c4K4Ddw5pGliI9q6pj343y-i7PR-8Pm-Bx-EnoFMAIh82xTzCSWUThhwwdPsBo0gy0Qiecpv0YgQyBPJcnaPHkLYxZGnKR2h9fdgG1P7Zotbh_va4sI5b3xcnvC8a9sj9g2eDaU3-KvWweJls9DT_Rqv_Lbuk-Lg-_6cnvu2suER3Tm9D_bpWsfo573YzD6S1ediOZuuEkMl9IljjFc8K0urBZMp1wDOCGt5ycFRASTPSk1SkUpbSYigBZeZ2FW6otQAG6PXy91j1_4ONvRq1w5dE18qynkEU57lkSIXynRtCJ116tj5g-5OCog6W1PRmjpbU1drMfJyiXhr7T8uBadMAPsDAbtm3Q</recordid><startdate>20220601</startdate><enddate>20220601</enddate><creator>Tsai, Yi-Chia</creator><creator>Leburton, Jean-Pierre</creator><creator>Bayram, Can</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-3987-1132</orcidid><orcidid>https://orcid.org/0000-0003-2658-9397</orcidid><orcidid>https://orcid.org/0000-0002-8183-5581</orcidid></search><sort><creationdate>20220601</creationdate><title>Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light-Emitting Diodes</title><author>Tsai, Yi-Chia ; Leburton, Jean-Pierre ; Bayram, Can</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-f336d65bbea73946a11fc7ee6b61f271085ba04749ed9165be1f5c916dad22c13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aluminum</topic><topic>Augers</topic><topic>Charge carrier processes</topic><topic>Cubic phase</topic><topic>Current density</topic><topic>Effective mass</topic><topic>Efficiency</topic><topic>efficiency droop</topic><topic>Electrons</topic><topic>Gallium</topic><topic>Hexagonal phase</topic><topic>InGaAlN</topic><topic>internal polarization</topic><topic>Light emitting diodes</topic><topic>light-emitting diode (LED)</topic><topic>Polarization</topic><topic>Radiative recombination</topic><topic>Scattering</topic><topic>Wave functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsai, Yi-Chia</creatorcontrib><creatorcontrib>Leburton, Jean-Pierre</creatorcontrib><creatorcontrib>Bayram, Can</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tsai, Yi-Chia</au><au>Leburton, Jean-Pierre</au><au>Bayram, Can</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light-Emitting Diodes</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2022-06-01</date><risdate>2022</risdate><volume>69</volume><issue>6</issue><spage>3240</spage><epage>3245</epage><pages>3240-3245</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We show that the coexistence of strong internal polarization and large carrier (i.e., electron and hole) effective mass accounts for ~51% of the efficiency droop under high current densities in traditional (hexagonal-phase) indium-gallium-aluminum-nitride (InGaAlN) light-emitting diodes (h-LEDs) compared to cubic-phase InGaAlN LEDs (c-LEDs). Our analysis based on variational technique on c-LEDs predicts an enhancement of the current density at the onset of the droop, inherently present in green c-LEDs. These effects are a consequence of the polarization-free nature and small carrier effective mass of c-LEDs. Our analysis indicates that, by overlooking the electron-hole wave function overlap, the well-known ABC model is suspected to overestimate the Auger coefficient, leading to questionable conclusions on the efficiency droop. In turn, it shows that the c-LED efficiency droop is much immune to the Auger electron-hole asymmetry, the increase in the Auger coefficient, and, thus, efficiency degradation mechanisms.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2022.3167645</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-3987-1132</orcidid><orcidid>https://orcid.org/0000-0003-2658-9397</orcidid><orcidid>https://orcid.org/0000-0002-8183-5581</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3240-3245 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_9762371 |
| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum Augers Charge carrier processes Cubic phase Current density Effective mass Efficiency efficiency droop Electrons Gallium Hexagonal phase InGaAlN internal polarization Light emitting diodes light-emitting diode (LED) Polarization Radiative recombination Scattering Wave functions |
| title | Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light-Emitting Diodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T02%3A08%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Quenching%20of%20the%20Efficiency%20Droop%20in%20Cubic%20Phase%20InGaAlN%20Light-Emitting%20Diodes&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Tsai,%20Yi-Chia&rft.date=2022-06-01&rft.volume=69&rft.issue=6&rft.spage=3240&rft.epage=3245&rft.pages=3240-3245&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2022.3167645&rft_dat=%3Cproquest_RIE%3E2669164658%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2669164658&rft_id=info:pmid/&rft_ieee_id=9762371&rfr_iscdi=true |