The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. W...

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Veröffentlicht in:IEEE journal of the Electron Devices Society 2022, Vol.10, p.309-312
Hauptverfasser: Tai, Ya-Hsiang, Yuan, Yi-Cheng, Tu, Cheng-Che, Wang, Pin-Chun
Format: Artikel
Sprache:eng
Schlagworte:
Amorphous silicon
Electrooptical waveguides
Fluctuations
gap-type
Illumination
Lighting
Noise
Photovoltaic cells
Physics
Semiconductor devices
Sensors
Thin film transistors
thin-film transistors (TFTs)
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Zusammenfassung:Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. We compare the difference between the results of the gap-type and the conventional-type TFTs. In addition, we analyze it including the perspectives of power spectrum, integral power spectrum, Hooge parameter, fluctuate slope. Finally, we explain the reason for its fluctuate slope transition and review the correlation between noise behavior and photo effect mechanism.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2022.3164082