Photoelectric properties of dislocations in Hg/sub 1-x/Cd/sub x/Te crystals

Photoelectric properties of dislocations in Hg/sub 1-x/Cd/sub x/Te crystals

Reports results of examinations of photoelectric processes appearing due to growth of dislocations and defects formed by mechanical effects in Hg/sub 1-x/Cd/sub x/Te crystals. Energy levels of these defects are calculated. It is also shown that in plastic deformed n-Hg/sub 1-x/Cd/sub x/Te crystals,...

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Hauptverfasser: Virt, I., Bilyk, M., Khlyap, G., Shkumbatiuk, P., Kuzma, M., Dumanski, L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carriers
Conductivity
Crystals
Electron mobility
Impurities
Laser modes
Mercury (metals)
Optical pulse generation
Scattering
Tellurium
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creator Virt, I.
Bilyk, M.
Khlyap, G.
Shkumbatiuk, P.
Kuzma, M.
Dumanski, L.
description Reports results of examinations of photoelectric processes appearing due to growth of dislocations and defects formed by mechanical effects in Hg/sub 1-x/Cd/sub x/Te crystals. Energy levels of these defects are calculated. It is also shown that in plastic deformed n-Hg/sub 1-x/Cd/sub x/Te crystals, charge carrier current and recombination properties are determined by the channels of higher electron concentration with energy gap close to the position of injected defects (/spl sim/52 meV). It is demonstrated that in p-Hg/sub 1-x/Cd/sub x/Te crystals the concentration of acceptor levels increases simultaneously with the formation of dislocations; the type of minority charge carriers can be changed by the acceptor levels.
doi_str_mv 10.1109/EDMO.2001.974328
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_974328</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>974328</ieee_id><sourcerecordid>974328</sourcerecordid><originalsourceid>FETCH-ieee_primary_9743283</originalsourceid><addsrcrecordid>eNp9jkELgjAcxQcRFOU9Ou0L6Dad6M5mBBF18C42_9bCnGwL9Nsn1bnHg98P3uUhtGE0YIwKku9O5yCklAUi4VGYzpAnkpROjRLKBV8gz9oHncJjFofREh0vd-00tCCdURL3RvdgnAKLdYNrZVstK6d0Z7Hq8OFG7OuKmT-QrP7oQArA0ozWVa1do3kzAbwfV2i7z4vs4CsAKHujnpUZy--z6O_4BkehPF8</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Photoelectric properties of dislocations in Hg/sub 1-x/Cd/sub x/Te crystals</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Virt, I. ; Bilyk, M. ; Khlyap, G. ; Shkumbatiuk, P. ; Kuzma, M. ; Dumanski, L.</creator><creatorcontrib>Virt, I. ; Bilyk, M. ; Khlyap, G. ; Shkumbatiuk, P. ; Kuzma, M. ; Dumanski, L.</creatorcontrib><description>Reports results of examinations of photoelectric processes appearing due to growth of dislocations and defects formed by mechanical effects in Hg/sub 1-x/Cd/sub x/Te crystals. Energy levels of these defects are calculated. It is also shown that in plastic deformed n-Hg/sub 1-x/Cd/sub x/Te crystals, charge carrier current and recombination properties are determined by the channels of higher electron concentration with energy gap close to the position of injected defects (/spl sim/52 meV). It is demonstrated that in p-Hg/sub 1-x/Cd/sub x/Te crystals the concentration of acceptor levels increases simultaneously with the formation of dislocations; the type of minority charge carriers can be changed by the acceptor levels.</description><identifier>ISBN: 9780780370494</identifier><identifier>ISBN: 078037049X</identifier><identifier>DOI: 10.1109/EDMO.2001.974328</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge carriers ; Conductivity ; Crystals ; Electron mobility ; Impurities ; Laser modes ; Mercury (metals) ; Optical pulse generation ; Scattering ; Tellurium</subject><ispartof>2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567), 2001, p.325-330</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/974328$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/974328$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Virt, I.</creatorcontrib><creatorcontrib>Bilyk, M.</creatorcontrib><creatorcontrib>Khlyap, G.</creatorcontrib><creatorcontrib>Shkumbatiuk, P.</creatorcontrib><creatorcontrib>Kuzma, M.</creatorcontrib><creatorcontrib>Dumanski, L.</creatorcontrib><title>Photoelectric properties of dislocations in Hg/sub 1-x/Cd/sub x/Te crystals</title><title>2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567)</title><addtitle>EDMO</addtitle><description>Reports results of examinations of photoelectric processes appearing due to growth of dislocations and defects formed by mechanical effects in Hg/sub 1-x/Cd/sub x/Te crystals. Energy levels of these defects are calculated. It is also shown that in plastic deformed n-Hg/sub 1-x/Cd/sub x/Te crystals, charge carrier current and recombination properties are determined by the channels of higher electron concentration with energy gap close to the position of injected defects (/spl sim/52 meV). It is demonstrated that in p-Hg/sub 1-x/Cd/sub x/Te crystals the concentration of acceptor levels increases simultaneously with the formation of dislocations; the type of minority charge carriers can be changed by the acceptor levels.</description><subject>Charge carriers</subject><subject>Conductivity</subject><subject>Crystals</subject><subject>Electron mobility</subject><subject>Impurities</subject><subject>Laser modes</subject><subject>Mercury (metals)</subject><subject>Optical pulse generation</subject><subject>Scattering</subject><subject>Tellurium</subject><isbn>9780780370494</isbn><isbn>078037049X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jkELgjAcxQcRFOU9Ou0L6Dad6M5mBBF18C42_9bCnGwL9Nsn1bnHg98P3uUhtGE0YIwKku9O5yCklAUi4VGYzpAnkpROjRLKBV8gz9oHncJjFofREh0vd-00tCCdURL3RvdgnAKLdYNrZVstK6d0Z7Hq8OFG7OuKmT-QrP7oQArA0ozWVa1do3kzAbwfV2i7z4vs4CsAKHujnpUZy--z6O_4BkehPF8</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Virt, I.</creator><creator>Bilyk, M.</creator><creator>Khlyap, G.</creator><creator>Shkumbatiuk, P.</creator><creator>Kuzma, M.</creator><creator>Dumanski, L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2001</creationdate><title>Photoelectric properties of dislocations in Hg/sub 1-x/Cd/sub x/Te crystals</title><author>Virt, I. ; Bilyk, M. ; Khlyap, G. ; Shkumbatiuk, P. ; Kuzma, M. ; Dumanski, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_9743283</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Charge carriers</topic><topic>Conductivity</topic><topic>Crystals</topic><topic>Electron mobility</topic><topic>Impurities</topic><topic>Laser modes</topic><topic>Mercury (metals)</topic><topic>Optical pulse generation</topic><topic>Scattering</topic><topic>Tellurium</topic><toplevel>online_resources</toplevel><creatorcontrib>Virt, I.</creatorcontrib><creatorcontrib>Bilyk, M.</creatorcontrib><creatorcontrib>Khlyap, G.</creatorcontrib><creatorcontrib>Shkumbatiuk, P.</creatorcontrib><creatorcontrib>Kuzma, M.</creatorcontrib><creatorcontrib>Dumanski, L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Virt, I.</au><au>Bilyk, M.</au><au>Khlyap, G.</au><au>Shkumbatiuk, P.</au><au>Kuzma, M.</au><au>Dumanski, L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Photoelectric properties of dislocations in Hg/sub 1-x/Cd/sub x/Te crystals</atitle><btitle>2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567)</btitle><stitle>EDMO</stitle><date>2001</date><risdate>2001</risdate><spage>325</spage><epage>330</epage><pages>325-330</pages><isbn>9780780370494</isbn><isbn>078037049X</isbn><abstract>Reports results of examinations of photoelectric processes appearing due to growth of dislocations and defects formed by mechanical effects in Hg/sub 1-x/Cd/sub x/Te crystals. Energy levels of these defects are calculated. It is also shown that in plastic deformed n-Hg/sub 1-x/Cd/sub x/Te crystals, charge carrier current and recombination properties are determined by the channels of higher electron concentration with energy gap close to the position of injected defects (/spl sim/52 meV). It is demonstrated that in p-Hg/sub 1-x/Cd/sub x/Te crystals the concentration of acceptor levels increases simultaneously with the formation of dislocations; the type of minority charge carriers can be changed by the acceptor levels.</abstract><pub>IEEE</pub><doi>10.1109/EDMO.2001.974328</doi></addata></record>
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ispartof 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567), 2001, p.325-330
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Charge carriers
Conductivity
Crystals
Electron mobility
Impurities
Laser modes
Mercury (metals)
Optical pulse generation
Scattering
Tellurium
title Photoelectric properties of dislocations in Hg/sub 1-x/Cd/sub x/Te crystals
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T10%3A30%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Photoelectric%20properties%20of%20dislocations%20in%20Hg/sub%201-x/Cd/sub%20x/Te%20crystals&rft.btitle=2001%20International%20Symposium%20on%20Electron%20Devices%20for%20Microwave%20and%20Optoelectronic%20Applications.%20EDMO%202001%20(Cat.%20No.01TH8567)&rft.au=Virt,%20I.&rft.date=2001&rft.spage=325&rft.epage=330&rft.pages=325-330&rft.isbn=9780780370494&rft.isbn_list=078037049X&rft_id=info:doi/10.1109/EDMO.2001.974328&rft_dat=%3Cieee_6IE%3E974328%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=974328&rfr_iscdi=true