Photoelectric properties of dislocations in Hg/sub 1-x/Cd/sub x/Te crystals

Reports results of examinations of photoelectric processes appearing due to growth of dislocations and defects formed by mechanical effects in Hg/sub 1-x/Cd/sub x/Te crystals. Energy levels of these defects are calculated. It is also shown that in plastic deformed n-Hg/sub 1-x/Cd/sub x/Te crystals, charge carrier current and recombination properties are determined by the channels of higher electron concentration with energy gap close to the position of injected defects (/spl sim/52 meV). It is demonstrated that in p-Hg/sub 1-x/Cd/sub x/Te crystals the concentration of acceptor levels increases simultaneously with the formation of dislocations; the type of minority charge carriers can be changed by the acceptor levels.