The high quality low temperature oxidation technology in a quasi self-aligned SiGe HBT

The high quality low temperature oxidation technology in a quasi self-aligned SiGe HBT

A high quality low temperature oxide technology (LTO) was introduced as the emitter/base junction isolation layer of a Silicon-Germanium. (SiGe) HBT. Due to its lower Ge strain relaxation and boron out-diffusion effect, we showed that devices were obtained with a significant improvement in reliabili...

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Hauptverfasser: Li-Shyue Lai, Yang-Tai Tseng, Lurng-Sheng Lee, Yuh-Sheng Jean, Yu-Min Hsu, Hang-Ping Hwang, Shin-Chii Lu, Ming-Jim Tsai
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitive sensors
Germanium silicon alloys
Heterojunction bipolar transistors
Interface states
Isolation technology
MOS capacitors
Oxidation
Radio frequency
Silicon germanium
Temperature
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Zusammenfassung:A high quality low temperature oxide technology (LTO) was introduced as the emitter/base junction isolation layer of a Silicon-Germanium. (SiGe) HBT. Due to its lower Ge strain relaxation and boron out-diffusion effect, we showed that devices were obtained with a significant improvement in reliability, DC and RF performance in comparison with those fabricated using conventional LTO or thermal oxidation methods.
DOI:10.1109/EDMO.2001.974287