MOSFETs on (110) C-H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al 2 O 3 /(110) C-H diamond interface structure is of vital importance. MOSFETs with thin (10 nm)...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-03, Vol.69 (3), p.949-955
Hauptverfasser:	Liu, Benjian, Bi, Te, Fu, Yu, Kudara, Ken, Imanishi, Shoichiro, Liu, Kang, Dai, Bing, Zhu, Jiaqi, Kawarada, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Atomic layer deposition (ALD) Al₂O Atomic layer epitaxy conduction mechanism Diamond Diamonds Electronic devices FET Field effect transistors Interface analysis Logic gates Metals MOSFET MOSFETs normally-OFF Substrates Two dimensional hole gas
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