MOSFETs on (110) C-H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

MOSFETs on (110) C-H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al 2 O 3 /(110) C-H diamond interface structure is of vital importance. MOSFETs with thin (10 nm)...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 2022-03, Vol.69 (3), p.949-955
Hauptverfasser: Liu, Benjian, Bi, Te, Fu, Yu, Kudara, Ken, Imanishi, Shoichiro, Liu, Kang, Dai, Bing, Zhu, Jiaqi, Kawarada, Hiroshi
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum oxide
Atomic layer deposition (ALD) Al₂O
Atomic layer epitaxy
conduction mechanism
Diamond
Diamonds
Electronic devices
FET
Field effect transistors
Interface analysis
Logic gates
Metals
MOSFET
MOSFETs
normally-OFF
Substrates
Two dimensional hole gas
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al 2 O 3 /(110) C-H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al 2 O 3 layer were made in this study. The microstructure of Al 2 O 3 on (110) C-H diamond was analyzed. Abrupt interface of ALD Al 2 O 3 /C-H diamond was observed through high resolution transmission electron microscope (HRTEM). Cascode structure using diamond MOSFETs and enhancement mode silicon MOSFET is fabricated and its high performance is confirmed.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3147152