A 200-300 GHz SIS mixer-preamplifier with 8 GHz IF bandwidth

A 200-300 GHz SIS mixer-preamplifier with 8 GHz IF bandwidth

A 200-300 GHz SIS mixer-preamplifier with an IF bandwidth of 8 GHz Is described. The mixer uses Nb/Al-oxide/Nb tunnel junctions in a circuit with low IF capacitance and inductance. The mixer block is designed to mount directly on the body of the 4-12 GHz InP HFET preamplifier and mixer bias is provi...

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Veröffentlicht in:2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) 2001, Vol.3, p.1645-1648 vol.3
Hauptverfasser: Lauria, E.F., Kerr, A.R., Pospieszalski, M.W., Pan, S.-K., Effland, J.E., Lichtenberger, A.W.
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Capacitance
Circuits
Frequency
HEMTs
Indium phosphide
Inductance
MODFETs
Niobium
Preamplifiers
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Beschreibung
Zusammenfassung:A 200-300 GHz SIS mixer-preamplifier with an IF bandwidth of 8 GHz Is described. The mixer uses Nb/Al-oxide/Nb tunnel junctions in a circuit with low IF capacitance and inductance. The mixer block is designed to mount directly on the body of the 4-12 GHz InP HFET preamplifier and mixer bias is provided through the input circuit of the preamplifier. At a LO frequency of 230 GHz, the mixer-preamp gain is 30-35 dB, and the DSB receiver noise temperature is 45-57 K across the whole IF band. This is the largest instantaneous bandwidth reported to date for an SIS receiver.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2001.967220