Coplanar and microstrip oscillators in SiGe SIMMWIC technology

Coplanar and microstrip oscillators in SiGe SIMMWIC technology

Oscillators in SiGe SIMMWIC HBT technology have been realized in coplanar and a newly developed microstrip environment. Coplanar 24 GHz LC oscillators show 8.7 dBm output power and a phase noise of -99 dBc/Hz @ 100 kHz offset. Coplanar 27 GHz VCO's yield 12.5 dBm output power and a tuning range...

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Veröffentlicht in:2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) 2001, Vol.3, p.1563-1566 vol.3
Hauptverfasser: Strohm, K.M., Rheinfelder, C.N., Luy, J.-F., Nuechter, P., Hess, T., Heinrich, W., Kuhnert, H., Nadarassin, M., Warns, C., Menzel, W.
Format: Artikel
Sprache:eng
Schlagworte:
Fabrication
Germanium silicon alloys
Heterojunction bipolar transistors
Microstrip
Millimeter wave technology
Phase noise
Power generation
Silicon germanium
Space technology
Voltage-controlled oscillators
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Zusammenfassung:Oscillators in SiGe SIMMWIC HBT technology have been realized in coplanar and a newly developed microstrip environment. Coplanar 24 GHz LC oscillators show 8.7 dBm output power and a phase noise of -99 dBc/Hz @ 100 kHz offset. Coplanar 27 GHz VCO's yield 12.5 dBm output power and a tuning range of 1.28 GHz. Microstrip 27 GHz VCO's show 5 dBm output power and a phase noise better than -90 dBc/Hz @ 100 kHz offset.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2001.967201