High-voltage GaAs power-HBTs for base-station amplifiers

High-voltage GaAs power-HBTs for base-station amplifiers

Base stations require high-power devices operating at bias voltages around 26 V. This paper reports on GaAs HBTs with increased breakdown voltage. Transistors on unthinned wafers deliver 3.2 W at 2 GHz for 27 V bias. 100 Ohms output impedance and 74% PAE make them very attractive for base-station am...

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Hauptverfasser: Kurpas, P., Brunner, F., Doemer, R., Janke, B., Heymann, P., Maasdorf, A., Doser, W., Auxemery, P., Blanck, H., Pons, D., Wurfl, J., Heinrich, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Base stations
Doping
Electronic ballasts
Frequency
Gallium arsenide
Heterojunction bipolar transistors
High power amplifiers
Impedance
MESFETs
Voltage
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Zusammenfassung:Base stations require high-power devices operating at bias voltages around 26 V. This paper reports on GaAs HBTs with increased breakdown voltage. Transistors on unthinned wafers deliver 3.2 W at 2 GHz for 27 V bias. 100 Ohms output impedance and 74% PAE make them very attractive for base-station amplifiers.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2001.966974