Dual bias feed SiGe HBT low noise linear amplifier

Dual bias feed SiGe HBT low noise linear amplifier

A 2 GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1 dB. In the small signal region, the conventional resistor feed circuit is a domin...

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Hauptverfasser: Taniguchi, E., Maeda, K., Ikushima, T., Sadahiro, K., Itoh, K., Suematsu, N., Takagi, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit noise
Current supplies
Diodes
Feeds
Germanium silicon alloys
Heterojunction bipolar transistors
High power amplifiers
Low-noise amplifiers
Resistors
Silicon germanium
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container_end_page 288 vol.1
container_issue
container_start_page 285
container_title
container_volume 1
creator Taniguchi, E.
Maeda, K.
Ikushima, T.
Sadahiro, K.
Itoh, K.
Suematsu, N.
Takagi, T.
description A 2 GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1 dB. In the small signal region, the conventional resistor feed circuit is a dominant base current source, but the in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1 dB improvement of 5 dB compared with the conventional resistor feed LNA.
doi_str_mv 10.1109/MWSYM.2001.966889
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identifier ISSN: 0149-645X
ispartof 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2001, Vol.1, p.285-288 vol.1
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2576-7216
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subjects Circuit noise
Current supplies
Diodes
Feeds
Germanium silicon alloys
Heterojunction bipolar transistors
High power amplifiers
Low-noise amplifiers
Resistors
Silicon germanium
title Dual bias feed SiGe HBT low noise linear amplifier
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