Dual bias feed SiGe HBT low noise linear amplifier

Dual bias feed SiGe HBT low noise linear amplifier

A 2 GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1 dB. In the small signal region, the conventional resistor feed circuit is a domin...

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Bibliographische Detailangaben
Hauptverfasser: Taniguchi, E., Maeda, K., Ikushima, T., Sadahiro, K., Itoh, K., Suematsu, N., Takagi, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit noise
Current supplies
Diodes
Feeds
Germanium silicon alloys
Heterojunction bipolar transistors
High power amplifiers
Low-noise amplifiers
Resistors
Silicon germanium
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Beschreibung
Zusammenfassung:A 2 GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1 dB. In the small signal region, the conventional resistor feed circuit is a dominant base current source, but the in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1 dB improvement of 5 dB compared with the conventional resistor feed LNA.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2001.966889