Multi-Layer Nanoelectromechanical (NEM) Memory Switches for Multi-Path Routing

Monolithic three-dimensional (M3D) multi-layer nanoelectromechanical (NEM) memory switches are experimentally demonstrated for reconfigurable multi-path routing. The multi-layer NEM memory switch has moving mechanical beams in different metal layers which operate independently in a nonvolatile manne...

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Veröffentlicht in:IEEE electron device letters 2022-01, Vol.43 (1), p.162-165
Hauptverfasser: Yoon, Jisoo, Kwon, Hyug su, Choi, Woo Young
Format: Artikel
Sprache:eng
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Zusammenfassung:Monolithic three-dimensional (M3D) multi-layer nanoelectromechanical (NEM) memory switches are experimentally demonstrated for reconfigurable multi-path routing. The multi-layer NEM memory switch has moving mechanical beams in different metal layers which operate independently in a nonvolatile manner, including high impedance states. For example, double-layer NEM memory switches implement nine different memory states. It is predicted that our proposed {n} -layer NEM memory switches utilizing {n} metal layers will exhibit 3^{({n}-{1}{)}}\text{x} higher routing flexibility and {n}\text{x} higher chip density than conventional single-layer NEM memory switches.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2021.3130579