Packaged \beta-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties

Recently, gallium oxide (Ga_2O_3) has attracted great interest as a material for efficient power devices. Yet, experimental studies rather concentrate on the investigation of bare dies and lack the analysis of devices in industry-standard packages. Furthermore, while Ga_2O_3 trench MOS Schottky barr...

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Veröffentlicht in:	IEEE transactions on power electronics 2022-04, Vol.37 (4), p.3737-3742
Hauptverfasser:	Wilhelmi, Florian, Kunori, Shinji, Sasaki, Kohei, Kuramata, Akito, Komatsu, Yuji, Lindemann, Andreas
Format:	Artikel
Sprache:	eng
Schlagworte:	Ga<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _2</tex-math> </inline-formula>O<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _3</tex-math> </inline-formula> Gallium Junctions package power semiconductor devices Schottky barriers Schottky diodes Silicon carbide Temperature TO-247 trench MOS Voltage
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