Packaged \beta-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties

Recently, gallium oxide (Ga_2O_3) has attracted great interest as a material for efficient power devices. Yet, experimental studies rather concentrate on the investigation of bare dies and lack the analysis of devices in industry-standard packages. Furthermore, while Ga_2O_3 trench MOS Schottky barrier diodes (SBDs) appear to be promising candidates, temperature-dependent measurements previously revealed inhomogeneous junctions. In this letter, a vertical \beta-Ga_2O_3 trench MOS SBD is presented. The diode exhibits a homogeneous Schottky junction and nearly ideal thermionic current flow. This indicates better junction properties than previously observed for trench as well as non-trench Ga_2O_3 SBDs, with only a slight influence of interface states at high temperatures. As a next step toward application, the chip is successfully bonded in an industry-standard TO-247 package. The molded discrete is operational at low temperatures of −50 °C and up to high temperatures of 150 °C while exhibiting a lower increase in on -resistance with rising temperature than SiC Schottky diodes.